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(R)
STN1802
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
PRELIMINARY DATA
Ordering Code STN1802
s
Marking N1802
s s s
VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC FAST-SWITCHING SPEED SURFACE-MOUNTING SOT-223 MEDIUM POWER PACKAGE IN TAPE & REEL
2
1
2
3
APPLICATIONS: CCFL DRIVERS s VOLTAGE REGULATORS s RELAY DRIVERS s HIGH EFFICIENCY LOW VOLTAGE SWITCHING APPLICATIONS
s
SOT-223
DESCRIPTION The device is manufactured in NPN Planar Technology by using a "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Dissipation at T amb = 25 o C Storage Temperature Max. Operating Junction Temperature Value 80 60 6 3 6 1 1.6 -65 to 150 150 Unit V V V A A A W
o o
C C
March 2003
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STN1802
THERMAL DATA
R thj-amb Thermal Resistance Junction-Ambient
2
Max
78
o
C/W
* Device mounted on a PCB area of 1 cm .
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CBO I EBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = 40 V V EB = 4 V I C = 10 A 80 Min. Typ. Max. 0.1 0.1 Unit A A V
V (BR)CBO Collector-Base Breakdown Voltage (I E = 0) V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) V CE(sat) V BE(sat) h FE fT C CBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition frequency Collector-Base Capacitance RESISTIVE LOAD Turn- on Time Storage Time Fall Time
I C = 1 mA
60
V
I E = 10 A
6
V
IC = 2 A IC = 3 A IC = 2 A I C = 100 mA IC = 3 A V CE = 10 V V CB = 10 V
I B = 100 mA I B = 150 mA I B = 100 mA V CE = 2 V V CE = 2 V I C = 50 mA f = 1 MHz 200 100
150 200 0.9
300 400 1.2 400
mV mV V
150 50
MHz pF
t ON ts tf
IC = 1 A I B1 = - I B2 = 0.1 A
V CC = 30 V
50 1.35 120
ns ms ns
Pulsed: Pulse duration = 300s, duty cycle = 1.5 %
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STN1802
SOT-223 MECHANICAL DATA
mm MIN. A B B1 c D e e1 E H V A1 0.02 3.30 6.70 0.60 2.90 0.24 6.30 0.70 3.00 0.26 6.50 2.30 4.60 3.50 7.00 3.70 7.30 10o 0.130 0.264 TYP. MAX. 1.80 0.80 3.10 0.32 6.70 0.024 0.114 0.009 0.248 0.027 0.118 0.010 0.256 0.090 0.181 0.138 0.276 0.146 0.287 10o MIN. inch TYP. MAX. 0.071 0.031 0.122 0.013 0.264
DIM.
P008B
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STN1802
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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